Search results for " SPIN RELAXATION"

High-spin → low-spin relaxation in the two-step spincrossover compound [Fe(pic)3]Cl2EtOH (pic = 2-picolylamine)

1998

Abstract The spin-crossover compound [Fe(pic) 3 ]Cl 2 EtOH (pic = 2-picolylamine) shows an unusual two-step spin transition. This is thought to be caused by specific nearest-neighbour interactions and short-range correlations and requires a theoretical treatment of the elastic interactions between the spin-changing molecules beyond the mean-field approximation. Such short-range correlations also influence the high-spin → low-spin relaxation following the light-induced population of the high-spin state at cryogenic temperatures, leading to characteristic deviations from the predictions of a mean-field treatment. These deviations are directly observable by comparison of the full and unperturb…

NMR and μ+SR detection of unconventional spin dynamics in Er(trensal) and Dy(trensal) molecular magnets

2019

Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors

2013

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electro…

Monte Carlo Simulation of Electron Dynamics in Doped Semiconductors Driven by Electric Fields: Harmonic Generation, Hot-Carrier Noise and Spin Relaxa…

2011

In solid state electronics the miniaturization of integrated circuits implies that, even at moderate applied voltages, the components can be exposed to very intense electric fields. Advances in electronics push the devices to operate also under cyclostationary conditions, i.e. under large-signal and time-periodic conditions. A main consequence of this fact is that circuits exhibit a strongly nonlinear behavior. Furthermore, semiconductor based devices are always imbedded into a noisy environment that could strongly affect their performance, setting the lower limit for signal detection in electronic circuits. For this reason, to fully understand the complex scenario of the nonlinear phenomen…

Phonon-induced spin relaxation of conduction electrons in silicon crystals

2014

Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin …

Slow magnetic fluctuations and superconductivity in fluorine-doped NdFeAsO

2015

Among the widely studied superconducting iron-pnictide compounds belonging to the Ln1111 family (with Ln a lanthanide), a systematic investigation of the crossover region between the superconducting and the antiferromagnetic phase for the Ln = Nd case has been missing. We fill this gap by focusing on the intermediate doping regime of NdFeAsO(1-x)F(x) by means of dc-magnetometry and muon-spin spectroscopy measurements. The long-range order we detect at low fluorine doping is replaced by short-range magnetic interactions at x = 0.08, where also superconductivity appears. In this case, longitudinal-field muon-spin spectroscopy experiments show clear evidence of slow magnetic fluctuations that …

Monte Carlo investigation of electron spin relaxation in GaAs crystals during low-field transport

2011

A great emerging interest within the condensed matter physics is the use of electron spin in semiconductor-based spintronic devices to perform both logic operations, communication and storage. In order to make spintronics a feasible technology, sufficiently long spin lifetimes and the possibility to manipulate, control and detect the spin polarization are required. The loss of spin polarization before, during and after the necessary operations is a crucial problem into spin device design; thus, a full understanding of the role played by the lattice temperature, the doping density and the amplitude of the applied electric field on the electron spin dynamics in semiconductors is essential for…

Metastability and Relaxation in Quantum and Mesoscopic Systems

2013

The transient dynamics and the relaxation of three quantum and mesoscopic systems are investigated. In particular we analyze: (i) a long Josephson junction (LJJ) driven by a non-Gaussian Lévy noise current; (ii) a metastable quantum dissipative system driven by an external periodical driving; and (iii) the electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field. Specifically, in the first system the LJJ phase evolution is described by the perturbed sine-Gordon equation. We find the noise enhanced stability and resonant activation phenomena, by investigating the mean escape time as a function of the bias current frequency, noise intensity and length of…

Nonlinear relaxation in quantum and mesoscopic systems

2013

The nonlinear relaxation of three mesoscopic and quantum systems are investigated. Specifically we study the nonlinear relaxation in: (i) a long Josephson junction (LJJ) driven by a non-Gaussian Lévy noise current; (ii) a metastable quantum open system driven by an external periodical driving; and (iii) the electron spin relaxation process in n-type GaAs crystals driven by a fluctuating electric field. In the first system the LJJ phase evolution is described by the perturbed sine-Gordon equation. Two well known noise induced effects are found: the noise enhanced stability and resonant activation phenomena. We investigate the mean escape time as a function of the bias current frequency, nois…